| Symbol | Description | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| fHFXO |
External crystal frequency |
32 | MHz | ||
| fTOL_HFXO |
Frequency tolerance requirement for 2.4 GHz proprietary radio applications |
±60 | ppm | ||
| fTOL_HFXO_BLE |
Frequency tolerance requirement, Bluetooth Low Energy applications |
±40 | ppm | ||
| CL_HFXO |
Load capacitance |
6 | 9 | pF | |
| PD_HFXO |
Drive level |
100 | µW | ||
| CPIN_HFXO |
Input capacitance on XC1 and XC2 pins with internal capacitor disabled (INTCAP=0) |
3.1 | pF | ||
| ISTBY_X32M_X2 |
Core standby current for a given 2.0x1.6 mm crystal: CL_HFXO=8 pF C0_HFXO=0.74 pF LM_HFXO=9.4 mH RS_HFXO=35 Ω |
34 | µA | ||
| ISTART_X32M_X2 |
Average startup current during first 1ms for a given 2.0x1.6 mm crystal |
0.36 | mA | ||
| tPOWERUP_X32M_X2 |
Power-up time for a given 2.0x1.6 mm crystal, generating XOSTARTED event |
200 | µs | ||
| tPOWERUP_X32M_TUNED_X2 |
Power-up time for a given 2.0x1.6 mm crystal, generating XOTUNED event |
300 | µs | ||
| ISTBY_X32M_X3 |
Core standby current for a given 1.2x1.0 mm crystal: CL_HFXO=8 pF C0_HFXO=0.42 pF LM_HFXO=22.7 mH RS_HFXO=100 Ω |
63 | µA | ||
| ISTART_X32M_X3 |
Average startup current during first 1ms for a given 1.2x1.0 mm crystal |
0.38 | mA | ||
| tPOWERUP_X32M_X3 |
Power-up time for a given 1.2x1.0 mm crystal, generating XOSTARTED event |
415 | µs | ||
| tPOWERUP_X32M_TUNED_X3 |
Power-up time for a given 1.2x1.0 mm crystal, generating XOTUNED event |
700 | µs |