Electrical parameters have been measured using a 2.2 µH Taiyo Yuden inductor (LSCNB1608HKT2R2MD), CVBAT=10 µF, CVINT=22 µF, CVOUT=2.2 µF. TJ=-40°C to 105°C, VBAT=0.8 V to 3.4 V and TJ=25°C, VBAT=1.25 V for typical values (unless otherwise noted).

Table 1. BOOST electrical specification
Symbol Description Min. Typ. Max. Units
VBATSTART Regulator power stage input voltage range, cold start 0.8 3.4 V
VBATOPER Regulator core part input voltage range, operating 0.7 3.4 V
VBATPT Regulator core part input voltage range, Pass-through mode 1.8 3.4 V
VOUTPROG Programmable output voltage range (except Pass-through mode) 1.8 to 3.3 V
VOUTSTEP Output voltage step 50 mV
VOUTLP Average VOUT level in Low Power and Ultra-Low Power modes VOUT.LVL + 0.05 V
VOUTLP_RIPPLE VOUT ripple in Low Power and Ultra-Low Power modes 70 mVp-p
IVOUT_MAX_PT Maximum output current, Pass-through mode 150 mA
POUTMAX Maximum output power, High Power mode (3.0<VOUT≤3.3 V, loaded VBAT≥1.25 V) 450 mW
IVOUT_MAX Maximum output current, High Power mode (VOUT≤3.0 V, loaded VBAT≥1.25 V) 150 mA
CVBAT Effective input capacitance on VBAT pin 3.5 µF
CVINT Effective capacitance on VINT pin 3.5 µF
CVOUT Effective capacitance on VOUT pin 0.7 15 µF
VOUTACCURWC Output voltage accuracy, High Power mode, includes line and load regulation (loaded VBAT≥1.25 V) -5 5 %
VOUTACCUR Output voltage accuracy, High Power mode, excluding load and line regulation (loaded VBAT=1.25 V, TJ=25°C) -2 2 %
FBOOST Switching frequency in High Power mode 2 MHz
EFFULP1V5 Efficiency (VBAT=1.5 V, VOUT=1.8 V, IVOUT=0.1 mA, Ultra-Low Power mode) 87 %
EFFULP2V9 Efficiency (VBAT=2.9 V, VOUT=3 V, IVOUT=0.1 mA, Ultra-Low Power mode) 91 %
EFFLP1V5 Efficiency (VBAT=1.5 V, VOUT=1.8 V, IVOUT=10 mA, Low Power mode) 88 %
EFFLP2V9 Efficiency (VBAT=2.9 V, VOUT=3 V, IVOUT=10 mA, Low Power mode) 92 %
EFFHP1V5 Efficiency (VBAT=1.5 V, VOUT=1.8 V, IVOUT=110 mA, High Power mode) 88 %
EFFHP2V9 Efficiency (VBAT=2.9 V, VOUT=3 V, IVOUT=110 mA, High Power mode) 93 %
ILIMBOOST Input (valley) current limiter ILIM range, High Power mode 100 to 800 mA
ILIMSTEP ILIM step (register setting) 100 mA
VBATMON Input voltage monitoring: VBATMINL and VBATMINH range 0.65 to 3.15 V
VBATMINSTEP Step for VBATMINL and VBATMINH 50 mV
VOUTMON Threshold range for output voltage monitoring, VOUTMIN and VOUTWRN 1.7 to 3.25 V
VOUTSTEPSIZE Step size for VOUTMIN and VOUTWRN 50 mV
OCPBOOST_PT Overcurrent protection limit for the PMOS transistor in Pass-through mode 325 mA